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Abstract Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high‐quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO₃(STO), MgO, LaAlO₃, a‐Al₂O_3,and many others. Recent successes in transferring these complex oxides as free‐standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost‐effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high‐resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre‐strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y₃Fe₅O₁₂) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high‐quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices. 

AgInSe2 is a promising direct bandgap thin-film material with a rare n-type conductivity. Similar to thin film photovoltaic materials such as Cu(In,Ga)Se2 (CIGSe), which have achieved efficiencies as high as ~23%, AgInSe2 also crystallizes in a chalcopyrite phase while also being more tolerant to antisite defects due to higher defect formation energies resulting from more significant variations in cation sizes. AgInSe2 has a suitable bandgap of 1.24 eV, which lies in the high-efficiency region of the detailed balance limit. In this work, we have utilized a Dimethyl Formamide-Thiourea-Chloride-based solution-processed route to deposit a thin film of AgInS2 which is converted into AgInSe2 after a heat-treatment step in a selenium environment. AgInSe2 optoelectronic properties depend on the Ag/In ratio and the selenium heat-treatment conditions. Significant improvements in photoluminescence yield and lifetime are observed for Ag-poor films in selenium-rich conditions. X-ray Photoelectron Spectroscopy (XPS) measurements confirm a higher amount of selenium on the surface of films with improved optoelectronic properties. Furthermore, a high minority carrier lifetime of 9.2 ns and a Photoluminescence Quantum Yield (PLQY) of 0.013% is obtained without any passivating layer, which improved to 0.03% after CdS passivation. Hall effect measurements confirm that AgInSe2 has n-type conductivity with a moderate carrier concentration (10-14 cm-3), more suitable for a p-i-n architecture. XPS has further confirmed the moderate n-type conductivity. 

In this study, we show how strong metal–support interaction (SMSI) oxides in Pt–Nb/SiO 2 and Pt–Ti/SiO 2 affect the electronic, geometric and catalytic properties for propane dehydrogenation. Transmission electron microscopy (TEM), CO chemisorption, and decrease in the catalytic rates per gram Pt confirm that the Pt nanoparticles were partially covered by the SMSI oxides. X-ray absorption near edge structure (XANES), in situ X-ray photoelectron spectroscopy (XPS), and resonant inelastic X-ray scattering (RIXS) showed little change in the energy of Pt valence orbitals upon interaction with SMSI oxides. The catalytic activity per mol of Pt for ethylene hydrogenation and propane dehydrogenation was lower due to fewer exposed Pt sites, while turnover rates were similar. The SMSI oxides, however, significantly increase the propylene selectivity for the latter reaction compared to Pt/SiO 2 . In the SMSI catalysts, the higher olefin selectivity is suggested to be due to the smaller exposed Pt ensemble sites, which result in suppression of the alkane hydrogenolysis reaction; while the exposed atoms remain active for dehydrogenation.